tn2410l, vn2406d/l, VN2410L/ls vishay siliconix document number: 70204 s-04279?rev. f, 16-jul-01 www.vishay.com 11-1 n-channel 240-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) tn2410l 10 @ v gs = 4.5 v 0.5 to 1.8 0.18 vn2406d 6 @ v gs = 10 v 0.8 to 2 1.12 vn2406l 240 6 @ v gs = 10 v 0.8 to 2 0.18 VN2410L 10 @ v gs = 10 v 0.8 to 2 0.18 VN2410Ls 10 @ v gs = 10 v 0.8 to 2 0.19
low on-resistance: 3.5 secondary breakdown free: 260 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature ?run-away? high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control 1 to-220ab (tab drain) top view g s d 2 3 to-226aa (to-92) top view s d g 1 2 3 to-92s (copper lead frame) top view s d g 1 2 3 tn2410l vn2406l VN2410L vn2406d VN2410Ls tn2410l ?s? tn 2410l xxyy vn2406l ?s? vn 2406l xxyy VN2410L ?s? vn 2410l xxyy ?device marking front view ?s? = siliconix logo xxyy = date code vn2406d ?s? xxyy vn2406d ?s? = siliconix logo xxyy = date code ?device marking front view ?device marking front view ?s? = siliconix logo xxyy = date code ?s? vn 2410ls xxyy VN2410Ls
parameter symbol tn2410l vn2406d b vn2406l VN2410L VN2410Ls unit drain-source voltage v ds 240 240 240 240 240 gate-source voltage v gs 20 20 20 20 20 v continuous drain current t a = 25 c 0.18 1.12 0.18 0.18 0.19 continuous drain current (t j = 150 c) t a = 100 c i d 0.11 0.7 0.11 0.11 0.12 a pulsed drain current a i dm 1 3 1.7 1.7 2 t a = 25 c 0.8 20 0.8 0.8 0.9 power dissipation t a = 100 c p d 0.32 8 0.32 0.32 0.4 w thermal resistance, junction-to-ambient r thja 156 6.25 c 156 156 139 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. c. maximum junction-to-case
tn2410l, vn2406d/l, VN2410L/ls vishay siliconix www.vishay.com 11-2 document number: 70204 s-04279 ? rev. f, 16-jul-01
limits tn2410l vn2406d/l VN2410L/ls parameter symbol test conditions typ a min max min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 260 240 240 240 gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.4 0.5 1.8 0.8 2 0.8 2 v v ds = 0 v, v gs = 15 v 100 100 gate-body leakage i gss t j = 125 c 500 500 na v ds = 0 v, v gs = 20 v 10 v ds = 192 v, v gs = 0 v 0.01 1 t j = 125 c 1 100 a t j = 125 c 500 500 v ds = 10 v, v gs = 4.5 v 0.8 0.25 on-state drain current b i d(on) v ds = 15 v, v gs = 10 v 1.5 1 1 a v gs = 2.5 v, i d = 0.1 a 7.5 10 10 v gs = 3.5 v, i d = 0.05 a 4.5 15 v gs = 4.5 v, i d = 0.2 a 4 10 c 7.5 20 v gs = 10 v, i d = 0.5 a 3.5 6 10 t j = 125 c 6.5 14.8 24.7 v ds = 10 v, i d = 0.2 a 500 100 forward transconductance b g fs v ds = 10 v, i d = 0.5 a 530 300 300 ms input capacitance c iss 115 135 135 135 output capacitance c oss v ds = 25 v, v gs = 0 v f = 1 mhz 30 50 50 50 pf reverse transfer capacitance c rss f = 1 mhz 5 20 20 20 switching c t on 5 35 turn-on time t d(on) 3 8 8 t r v dd = 60 v, r l = 150 2 8 8 t off i d 0.4 a, v gen = 10 v r g = 25 26 60 ns turn-off time t d(off) 20 23 23 t f 6 34 34 notes a. for design aid only, not subject to production testing. vndb24 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
tn2410l, vn2406d/l, VN2410L/ls vishay siliconix document number: 70204 s-04279 ? rev. f, 16-jul-01 www.vishay.com 11-3 ohmic region characteristics output characteristics for low gate drive v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) 1.0 0123 45 0.8 0.6 0.4 0.2 0 v gs = 10 v 4.0 v 3.5 v 3.0 v 2.5 v 2.0 v 200 0 0.4 0.8 1.2 1.6 2.0 160 120 80 40 0 v gs = 3 v 2.6 v 2.4 v 2.2 v 2.0 v 1.8 v on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 0.5 0.4 0.3 0 01 5 0.2 0.1 234 125 c 25 c t j = ? 55 c 6 5 4 0 0 0.1 0.6 3 1 0.2 0.3 0.4 0.5 2 0 4 8 12 16 20 12 10 8 0 6 4 2 i d = 0.1 a 0.5 a 1.0 a 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 0.1 a v gs = 10 v i d = 0.5 a v gs = 10 v v ds = 15 v i d ? drain current (a) i d ? drain current (ma) i d ? drain current (a) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
tn2410l, vn2406d/l, VN2410L/ls vishay siliconix www.vishay.com 11-4 document number: 70204 s-04279 ? rev. f, 16-jul-01 threshold region capacitance v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) 10 1 0.01 0.3 0.1 0.7 1.1 1.5 25 c ? 55 c t j = 150 c 400 300 0 010 50 200 100 20 30 40 v gs = 0 v f = 1 mhz v ds = 5 v c iss c oss c rss 100 10 1 1 100 210 52050 v dd = 60 v r l = 150 i d = 0.4 a 0.01 0.1 1 100 10 1 v ds = 60 v r g = 25 gate charge load condition effects on switching i d ? drain current (a) q g ? total gate charge (pc) t d(off) t d(on) t r t f drive resistance effects on switching source-drain diode forward voltage t d(off) t d(on) t r t f 15.0 12.5 10.0 0 0 400 2000 7.5 5.0 800 1200 1600 2.5 192 v 0 0.5 2.5 1 0.1 0.01 1.0 1.5 2.0 t j = 25 c t j = 150 c v sd ? source-drain voltage (v) r g ? gate resistance ( ) i d = 0.5 a v ds = 120 v i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns) t ? switching time (ns) i s ? source current (a)
tn2410l, vn2406d/l, VN2410L/ls vishay siliconix document number: 70204 s-04279 ? rev. f, 16-jul-01 www.vishay.com 11-5 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k normalized effective transient thermal impedance, junction-to-ambient (to-226aa) normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
